Title :
Study of band-edge emission in CdS layers grown on |p-type porous GaAs substrates
Author :
Missaoui, A. ; Beji, L. ; Gaïdi, M. ; Bouazizi, A.
Author_Institution :
Lab. Phys. et Chimie des Interfaces, Monastir
Abstract :
We present the optical properties of sulphide cadmium (CdS) deposited, by vacuum evaporation technique, on porous p-type GaAs substrates with different porosities and compared to that deposited on glass and nominal p-type GaAs substrates. The CdS layer deposited on glass substrate exhibit average transmittance about 62% in the visible region and very sharp absorption edge at 495 nm. The room temperature band gap energy calculated from the transmittance spectra is about 2.5 eV. The surface roughness (rms) has been determined by atomic force microscopy (AFM). The photoluminescence (PL) and reflectance spectroscopy of the samples before and after deposition of CdS were measured to study the effect of the porosity on the luminescence properties of CdS/porous GaAs heterostructures.
Keywords :
II-VI semiconductors; atomic force microscopy; cadmium compounds; energy gap; photoluminescence; porosity; reflectivity; semiconductor epitaxial layers; surface roughness; ultraviolet spectra; vacuum deposition; AFM; CdS; GaAs; absorption edge; atomic force microscopy; band-edge emission; photoluminescence; porosities; porous p-type substrates; reflectance spectroscopy; room temperature band gap energy; sulphide cadmium; surface roughness; temperature 293 K to 298 K; transmittance spectra; vacuum evaporation technique; wavelength 495 nm; Atomic force microscopy; Cadmium; Electromagnetic wave absorption; Gallium arsenide; Glass; Photonic band gap; Rough surfaces; Stimulated emission; Temperature; Vacuum technology;
Conference_Titel :
ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007
Conference_Location :
Sousse
Print_ISBN :
978-1-4244-1639-4
Electronic_ISBN :
978-1-4244-1639-4
DOI :
10.1109/ICTONMW.2007.4446972
