• DocumentCode
    2947099
  • Title

    Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications

  • Author

    Weng, Shou-Hsien ; Lin, Chi-Hsien ; Chang, Hong-Yeh ; Chiong, Chau-Ching

  • Author_Institution
    Department of Electrical Engineering, National Central University, Jhongli, Taoyuan, 320, Taiwan, R. O. C.
  • fYear
    2008
  • fDate
    15-20 June 2008
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    Two Q-band low noise amplifiers using a 0.15-μm InGaAs MHEMT process for broadband communication and radio astronomy applications are presented in this paper. Between 37 and 53 GHz, the LNA1 features a small signal gain of higher than 31 dB, a noise figure of better than 3.5 dB with a minimum noise figure of 2.8 dB at 44 GHz, and a gain-bandwidth product (GBP) of 679 GHz. Between 32 and 50 GHz, the LNA2 features a small signal gain of higher than 28 dB, a noise figure of better than 3.2 dB with a minimum noise figure of 2.6 dB at 44 GHz, and a GBP of 569 GHz. The chip sizes of the LNA1 and LNA2 are both 2 x 1 mm2. The LNAs demonstrate broad bandwidth, high gain, low noise figure, and compact chip size, and they will be further applied to a few broadband receivers for communications and radio astronomy applications. Moreover, this work demonstrates the highest GBP among all the reported Q-band LNAs.
  • Keywords
    Bandwidth; Broadband amplifiers; Broadband communication; Gallium arsenide; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Radio astronomy; mHEMTs; Broadband; InGaAs; MHEMT; high gain; low noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • Conference_Location
    Atlanta, GA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4633201
  • Filename
    4633201