Title :
Experimental cryogenic modeling and noise of SiGe HBTs
Author :
Bardin, Joseph C. ; Weinreb, Sander
Author_Institution :
California Institute of Technology, Pasadena, 91125, USA
Abstract :
SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedure for extracting a simple equivalent circuit model capable of accurately describing SiGe HBT devices. Next, small-signal modeling results obtained for a 3times0.12times18um2 SiGe HBT at 15, 40, 77, 120, 200, and 300 K are presented along with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performance is presented as a function of temperature and frequency using the concept of minimum cascaded noise temperature, a figure of merit which incorporates both noise temperature and gain.
Keywords :
Ge-Si alloys; cryogenic electronics; equivalent circuits; heterojunction bipolar transistors; semiconductor materials; HBT; cryogenic modeling; cryogenically cooled amplifiers; equivalent circuit; minimum cascaded noise temperature; temperature 15 K to 300 K; Circuit noise; Cooling; Cryogenics; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Silicon germanium; Temperature; Silicon-germanium (SiGe); cryogenic; low noise amplifier (LNA); noise parameters; transistor modeling;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633202
