Title :
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Author :
Thorsell, M. ; Andersson, K. ; Fagerlind, M. ; Südow, M. ; Nilsson, P. Å ; Rorsman, N.
Author_Institution :
GigaHertz Centre, Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden
Abstract :
The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
Keywords :
III-V semiconductors; aluminium compounds; electrical resistivity; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; HEMTs; MMIC amplifier; high electron mobility transistor; noise parameters; parasitic access resistances; temperature 298 K to 423 K; Aluminum gallium nitride; Electrical resistance measurement; Gallium nitride; Gold; HEMTs; MMICs; MODFETs; Noise figure; Noise measurement; Temperature dependence; Noise; gallium-nitride; thermal;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633203
