Title :
Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors
Author :
Sachelarie, D. ; Stanciu, S.G. ; Stanciu, G.A.
Author_Institution :
Univ. Politehnica of Bucharest, Bucharest
Abstract :
The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.
Keywords :
III-V semiconductors; atomic force microscopy; crystal orientation; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface topography; AFM; InP-InGaAs; atomic force microscopy; collector current; current gain; emitter crystallographic orientations; heterojunction bipolar transistors; mesa surface; three-dimensional surface topography; Atomic force microscopy; Degradation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Shape; Silicon; Stress; Surface topography;
Conference_Titel :
ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007
Conference_Location :
Sousse
Print_ISBN :
978-1-4244-1639-4
Electronic_ISBN :
978-1-4244-1639-4
DOI :
10.1109/ICTONMW.2007.4446981
