High-power modified uni-traveling carrier photodiode with > 50 dBm third order intercept point

Author

Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.

Author_Institution

Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, 22904, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

499

Lastpage

502

Abstract

The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiodepsilas 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.

Keywords

III-V semiconductors; capacitance; charge compensation; equivalent circuits; gallium arsenide; indium compounds; intermodulation distortion; photodiodes; InGaAs-InP; charge compensation; equivalent circuit model; frequency 0.3 GHz; frequency 23 GHz; high-power modified unitraveling carrier photodiode; modulation frequency; third order intercept point; third-order intermodulation distortions; voltage-dependent junction capacitance; Bandwidth; Distortion measurement; Distributed feedback devices; Frequency modulation; Indium gallium arsenide; Intermodulation distortion; Photoconductivity; Photodiodes; RNA; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633212

Filename

4633212