Title :
High-power modified uni-traveling carrier photodiode with > 50 dBm third order intercept point
Author :
Beling, Andreas ; Pan, Huapu ; Chen, Hao ; Campbell, Joe C.
Author_Institution :
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, 22904, USA
Abstract :
The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiodepsilas 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Keywords :
III-V semiconductors; capacitance; charge compensation; equivalent circuits; gallium arsenide; indium compounds; intermodulation distortion; photodiodes; InGaAs-InP; charge compensation; equivalent circuit model; frequency 0.3 GHz; frequency 23 GHz; high-power modified unitraveling carrier photodiode; modulation frequency; third order intercept point; third-order intermodulation distortions; voltage-dependent junction capacitance; Bandwidth; Distortion measurement; Distributed feedback devices; Frequency modulation; Indium gallium arsenide; Intermodulation distortion; Photoconductivity; Photodiodes; RNA; Voltage; InGaAs; linearity; photodiode (PD); third-order intermodulation distortion;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633212
