Title :
Electromagnetic macro-modeling of 3D high density trenched silicon capacitors for wafer-level-packaging
Author :
Wane, Sidina ; Muhlhaus, Volker ; Rautio, James
Author_Institution :
NXP-Semiconductors, 2 Esplanade Anton Philips, Campus EffiScience, Colombelles, BP 2000, 14906 CAEN Cedex 9 France
Abstract :
In this paper a full-wave electromagnetic (EM) macomodeling of 3D high-density trenched capacitors is proposed based on planar EM Method of Moments. The results are used to derive scalable wide-band SPIC E-compatible models synthesis easy to include in Physical Design Kit (PDK) libraries for frequency and time domain block-level and system-level simulations. Comparison of both EM macro-models and wideband extracted models with measurement data for various test case structures demonstrate satisfactory results for frequencies up 50 GHz.
Keywords :
capacitors; method of moments; wafer level packaging; 3D high density trenched silicon capacitors; electromagnetic macro-modeling; frequency domain block-level; method of moments; physical design kit libraries; scalable wide-band SPICE-compatible models synthesis; system-level simulations; time domain block-level; wafer-level-packaging; Capacitors; Data mining; Frequency measurement; Frequency synthesizers; Libraries; Moment methods; Semiconductor device modeling; Silicon; Testing; Wideband; 3D high-density trenched capacitors; Compact wideband models; Electromagnetic macro-modeling; System-in-Package (SiP); System-on-Chip (SoC); Wafer-Level Packaging; model synthesis;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633217
