Title :
A novel 2-12GHz 14dBm High Efficiency Power Distributed Amplifier for Ultra-Wideband- Applications Using a Low-Cost SiGe BiCMOS Technology
Author :
Sewiolo, Benjamin ; Weigel, Robert
Author_Institution :
Institute for Electronics Engineering, University of Erlangen-Nuremberg, Cauerstr. 9, 91058, Germany
Abstract :
In this paper the analysis, design and measurement results of a novel 2-12 GHz power distributed amplifier for ultra-wideband radar and sensing applications is presented. The amplifier is fabricated in a low-cost 0.25 μm SiGe BiCMOS technology with a transit frequency of 25GHz. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line for power optimization. The collector line has been tapered for efficiency improvement. More than 14 dBm have been measured in the desired frequency range with an associated gain of 9 dB and a gain flatness of ±0.5 dB with total power consumption of 250mW. To the authors knowledge, this is the highest output power achieved by a distributed amplifier in SiGe technology in this frequency range. The chip size of the compact amplifier is 1.16mm2. Good agreement between simulation and measurement were achieved.
Keywords :
BiCMOS integrated circuits; Distributed amplifiers; Frequency; Gain; Germanium silicon alloys; Integrated circuit measurements; Power measurement; Semiconductor device measurement; Silicon germanium; Ultra wideband technology; SiGe BiCMOS integrated circuits; Ultra-Wideband; capacitively coupled; distributed amplifiers; heterojunction bipolar transistors; power amplifiers; spiral inductors; tapered;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633254
