Characterization of barrier height due to metal for Schottky barrier diode

Author

Tayel, Mazhar B. ; El-Shawarby, Ayman M.

Author_Institution

Alexandria Univ., Alexandria

fYear

2007

fDate

27-29 Nov. 2007

Firstpage

258

Lastpage

261

Abstract

Dynamic characterization of barrier height due to metal for Schottky barrier diode are presented. The device is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO₂/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. A very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to metal of the Schottky contact.

Keywords

Schottky diodes; semiconductor device models; silicon compounds; Schottky barrier diode; SiO₂-SiC; barrier height characterization; interface state charge density; metal semiconductor interface; self-consistent model; semiconductor transport equation; Analytical models; Charge carrier processes; Current density; Interface states; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Engineering & Systems, 2007. ICCES '07. International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4244-1365-2

Electronic_ISBN

978-1-1244-1366-9

Type

conf

DOI

10.1109/ICCES.2007.4447057

Filename

4447057