Grain growth of Zinc Oxide films on quartz GlassTreated in N2/O2 atmosphere using microwave plasma Jet sintering system

Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on quartz substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately 50% N₂/50% O₂ with a 10 sccm gas flow rate for a process pressure of 35 Torr and 1200W applied power. Optical emission spectroscopic (OES) studies of N₂/O₂ microwave plasmas, the average gas temperature of the plasma to be 1809 K. X-ray diffraction (XRD), Micro-Raman, FE-SEM and UV-Vis spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. Intensity of diffraction peak for (101)-plane of ZnO films increases with increasing treated times in MPJSS. The highest measured regular optical transmittance of the ZnO films treated was 20% at 580-730 nm (including quartz absorption), whereas that of the ZnO films no-treated was 5% at 200-800nm (including quartz absorption).