Intergate-Channel-Connected Multi-gate PHEMT devices for antenna switch applications

Intergate-Channel-Connected Multi-gate Pseudomorphic High-Electron-Mobility Transistors (IGCC-PHEMT) for antenna switch of wireless communication terminals have been developed to improve their off-state distortions. A single-pole double throw (SPDT) switch with a IGCC-PHEMT is fabricated by using a standard 0.5 μm InGaAs PHEMT process. The 2nd and 3rd harmonic distortion of this switch are −88 dBc and −70 dBc, respectively, at a 30-dBm input power of 850 MHz, which are 7 and 8 dB lower than those with the same SPDT switch configuration and normal PHEMT.