Title :
A K-band AlGaN/GaN-based MMIC amplifier with microstrip lines on sapphire
Author :
Murata, Tomohiro ; Kuroda, Masayuki ; Nagai, Shuichi ; Nishijima, Masaaki ; Ishida, Hidetoshi ; Yanagihara, Manabu ; Ueda, Tetsuzo ; Sakai, Hiroyuki ; Tanaka, Tsuyoshi ; Li, Ming
Author_Institution :
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. 11 Kotari-Yakemachi, Nagaokakyo-shi, Kyoto 617-8520, JAPAN
Abstract :
We present a K-band AlGaN/GaN HFET MMIC amplifier with integrated microstrip lines on sapphire. The microstrip lines with via-holes through chemically stable sapphire are successfully formed for the first time by using a novel laser drilling technique. AlGaN/GaN HFETs with superlattice capping layers in the MMIC exhibit RF performance with ƒmax of 160GHz and NFmin of 2.5dB at 28GHz. The fabricated 3-stage MMIC amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems.
Keywords :
Aluminum gallium nitride; Chemical lasers; Gallium nitride; HEMTs; K-band; Laser stability; MMICs; MODFETs; Microstrip; Radiofrequency amplifiers; AlGaN/GaN heterojunction FET; MMIC amplifiers; laser drilling; microstrip line; sapphire; superlattices; via hole;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633299
