Title :
Resonant inversion of tunneling magnetoresistance using MgO/NiO barriers
Author :
Yang, H. ; Yang, S. ; Kaiser, C. ; Parki, S.
Author_Institution :
IBM Almaden Res. Center, San Jose
Abstract :
In this paper we report the magneto-transport properties, as a function of temperature and bias, of MTJs grown with barriers formed from double layers of MgO and NiO, CoO or MnO as well as triple layers of MgO/NiO, CoO and MnO/MgO.
Keywords :
cobalt compounds; galvanomagnetic effects; magnesium compounds; manganese compounds; nickel compounds; tunnelling magnetoresistance; CoO; MgO-NiO; MnO-MgO; double layer barriers; magnetic tunnel junctions; magneto-transport properties; resonant inversion; tunneling magnetoresistance; Amorphous magnetic materials; Annealing; Antiferromagnetic materials; Electrodes; Electrons; Magnetic resonance; Magnetic tunneling; Temperature; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374896
