Utilizing infrared for improved FET channel temperature prediction

Measuring channel temperature in FETs (field effect transistors) is challenging due to the submicron dimensions of the gate fingers. Among the simplest techniques for temperature measurement is Infrared (IR) microscopy. However, IR is suffers from limited spatial resolution (≫5–10 microns). This paper presents a model for the channel temperature prediction based on IR techniques by reversing the spatial averaging inherent in IR microscopy.