DocumentCode :
2948984
Title :
Piezoresistive pressure sensor with Ladder shape design of piezoresistor
Author :
Heng-Chung Chang ; Hsieh-Shen Hsieh ; Sung-Cheng Lo ; Chih-Fan Hu ; Weileun Fang
Author_Institution :
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
In this study, a novel piezoresistor (PZR) design to improve the sensitivity of the piezoresistive type pressure sensor is reported. In this design, the PZR combined with various doping concentrations and doping depths is proposed and implemented. According to the design concept, the combined PZR which includes multiple piezoresistance coefficients would be arranged in a unique shape, just like a ladder. Theoretically, the sensitivity improvement could boost up to 15% based on this PZR design, even under the conditions of membrane edge offset due to fabrication processes. As a result, the sensitivity of the pressure sensor which adopted the Ladder shape PZR design is 0.058 mV/V/kPa. Moreover, the doping profile of the Ladder shape PZR is also extracted by SIMS. The serial measurements successfully prove the feasibility of this design concept. In the future, the presented PZR design can be further extended to various piezoresistive sensors, such as accelerometer, gyro, etc.
Keywords :
piezoresistive devices; pressure sensors; resistors; Ladder shape design; PZR design; doping concentrations; doping depths; fabrication processes; piezoresistive pressure sensor; Doping; Fabrication; Piezoresistance; Sensitivity; Shape; Silicon; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411323
Filename :
6411323
Link To Document :
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