Controlled Switching in Magnetic Thin Film Elements

In this paper, we present initial TEM results backed by micromagnetic simulations in which variations in element geometry and symmetry can lead to a greater control of the states that can be formed. In the remanent state, rectangular elements support 90deg transverse walls connected between the corners of the element and a distance along the length of the structure. In the C-state, both walls are connected to the same edge whilst in the S-state they are connected to opposite edges. By including notches at these positions along the length of the element, a single remanent state can be supported provided the width and depth of the notch is of considerable size with respect to the element dimensions.