DocumentCode
2949369
Title
Efficient GaAs/AlGaAs electrooptic modulators on p-i-n rib waveguides with a low switching voltage
Author
Jong Chang Yi ; Young Tae Byun ; Sun Ho Kim
Author_Institution
Dept. of Electr. Eng., Hong Ik Univ., Seoul, South Korea
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only given. Semiconductor electrooptic modulators (EOMs) have drawn a significant attention for their large modulation bandwidth and low chirping. One drawback of such devices, however, is a large switching voltage mainly due to the weak linear electrooptic (LEO) effect. In this paper, we report an efficient semiconductor EOM with a switching voltage smaller than 1 V/mm. The rib waveguide phase modulator was fabricated on [100] GaAs/AlGaAs double hetero-structure p-i-n substrate.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; optical waveguide components; rib waveguides; GaAs-AlGaAs; GaAs/AlGaAs double heterostructure p-i-n substrate; phase modulator; rib waveguide; semiconductor electrooptic modulator; switching voltage; Bandwidth; Chirp modulation; Electrooptic devices; Electrooptic modulators; Gallium arsenide; Low earth orbit satellites; PIN photodiodes; Phase modulation; Semiconductor waveguides; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.909915
Filename
909915
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