Title :
A Composite Free Layer for High Density Magnetic Random Access Memory with Low Writing Field
Author :
Meng, H. ; Wang, J.J.
Author_Institution :
Univ. of Minnesota, Minneapolis
Abstract :
In this work, a new approach is demonstrated to effectively lower the magnetic random access memory (MRAM) writing field while the memory cell thermal stability is still maintained at a safe level. The soft layer is an FeSiO granular layer and the hard layer is a CoFe/Pt multilayer.
Keywords :
cobalt alloys; iron compounds; magnetic multilayers; platinum; random-access storage; soft magnetic materials; thermal stability; CoFe-Pt; FeSiO; composite free layer; granular layer; hard magnetic layer; magnetic multilayer; magnetic random access memory; memory cell; soft magnetic layer; thermal stability; writing field; Anisotropic magnetoresistance; Electrodes; Magnetic anisotropy; Magnetic properties; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Random access memory; Saturation magnetization; Shape; Writing;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.374956
