Single photon counting for 1300-1600 nm using Peltier cooled and passively quenched InGaAs avalanche photodiodes

Author

Rarity, J.G. ; Wall, T.E. ; Ridley, K.D. ; Tapster, P.R.

Author_Institution

DERA, Malvern, UK

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. Within this work we study single photon counting using passively quenched InGaAs avalanche photodiodes. Continuous operation is favourable for applications such as light fluctuation studies, rangefinding and OTDR. We would also like to build modules that can operate in the field and thus concentrate on temperatures easily achieved by Peltier cooling T>200 K. We report the comparative performance of detectors from NEC, EG&G and Fujitsu. Data will be presented comparing dark counts, quantum efficiency, timing jitter and afterpulsing probabilities for the various devices and temperatures down to 200 K. We find the best devices can show noise equivalent powers reaching 10/sup -15/ W/Hz/sup 1/2/.

Keywords

III-V semiconductors; Peltier effect; avalanche photodiodes; cooling; gallium arsenide; indium compounds; photon counting; radiation quenching; 1300 to 1600 nm; 200 K; InGaAs; InGaAs avalanche photodiode; Peltier cooling; afterpulsing probability; dark count; noise equivalent power; passive quenching; quantum efficiency; single photon counting; timing jitter; Bandwidth; Detectors; Diodes; Impedance; Indium gallium arsenide; Optical amplifiers; Optical noise; Silicon; Timing jitter; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909942

Filename

909942