• DocumentCode
    2949805
  • Title

    Noise Modeling Including Effect of propagation along the gate of a field-effect transistor

  • Author

    Balti, M. ; Samet, A. ; Pasquet, D. ; Bourdel, E.

  • Author_Institution
    Lab. SysCom, ENIT, Tunis
  • fYear
    2005
  • fDate
    11-14 Dec. 2005
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The transistors with large gate width are not really used by microwave circuit, because of the propagation phenomena problems and thermal dissipation (thermal noise). But the usefully frequencies becomes increasingly high, so the current short transistors will be affected by the propagation phenomena. This large width transistor noise analysis is fault of measurements limits beyond 18 GHz.
  • Keywords
    MMIC; fault diagnosis; field effect transistors; semiconductor device noise; thermal noise; current short transistors; field-effect transistor; microwave circuit; noise analysis; noise modeling; propagation effect; thermal dissipation; thermal noise; Circuit faults; Circuit noise; Frequency; Integrated circuit measurements; Microwave FETs; Microwave circuits; Microwave propagation; Microwave transistors; Noise figure; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
  • Conference_Location
    Gammarth
  • Print_ISBN
    978-9972-61-100-1
  • Electronic_ISBN
    978-9972-61-100-1
  • Type

    conf

  • DOI
    10.1109/ICECS.2005.4633408
  • Filename
    4633408