Title :
Low cost and room temperature plasma CVD silicon nitride passivation
Author :
Uz Zaman, M. Arif ; Sanders, Thomas J. ; Gsteiger, Kurt E. ; Linn, Jack H.
Author_Institution :
Florida Inst. of Technol., Melbourne, FL, USA
Abstract :
Encapsulation of active and passive components is often required for protection from the adverse effects of corrosive environments. In this research, we have designed and developed a low frequency PECVD system that is capable of depositing silicon nitride (SiN) films that meet industry passivation requirements. A plasma frequency of 60 Hz was used to deposit the SiN films which have refractive index from 2.0 to 2.3. The structural properties were also investigated. Low frequency SiN also showed excellent adherence (1.85-7.70×103 psi in pull tests) and low compressive stress (1.09-8.19×109 dynes/cm2)
Keywords :
dielectric thin films; encapsulation; passivation; plasma CVD; refractive index; silicon compounds; statistical analysis; 60 Hz; SiN; active components; adherence; compressive stress; corrosive environments; dielectric thin films; encapsulation; industry passivation requirements; low frequency PECVD system; passive components; plasma frequency; refractive index; structural properties; Costs; Encapsulation; Frequency; Optical films; Passivation; Plasma applications; Plasma temperature; Protection; Semiconductor films; Silicon compounds;
Conference_Titel :
Electronic Components and Technology Conference, 1996. Proceedings., 46th
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3286-5
DOI :
10.1109/ECTC.1996.550507
