Compact Model for Ultrathin Low Electron Effective Mass Double Gate MOSFET

Author

Roy, Ananda S. ; Mudanai, Sivakumar P. ; Basu, Debdeep ; Stettler, Mark A.

Author_Institution

Intel Corp., Hillsboro, OR, USA

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

308

Lastpage

313

Abstract

We present a core compact model for undoped, high mobility, and low density of states materials in a double gate device architecture. Analytical equations for calculating current and charge are presented in a drift-diffusion compact modeling framework. This model accurately handles both Fermi-Dirac statistics and bias-dependent diffusivity. The results from analytical equations are validated against exact numerical charge and current integrations and device simulation.

Keywords

MOSFET; integration; semiconductor device models; statistics; Fermi-Dirac statistics; analytical equation; bias-dependent diffusivity; drift-diffusion compact modeling framework; integration; numerical charge calculation; numerical current calculation; ultrathin low electron effective mass double gate MOSFET; Effective mass; Logic gates; Mathematical model; Numerical models; Quantum capacitance; Semiconductor device modeling; Fermi–Dirac statistics; III-V; MOSFET; compact model; quantum capacitance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2290779

Filename

6676824