DocumentCode
2950067
Title
Self-sustained micromechanical resonant pressure sensors
Author
Xiaobo Guo ; Rahafrooz, A. ; Yun-bo Yi ; Pourkamali, Siavash
Author_Institution
Dept. of Mech. & Mater. Eng., Univ. of Denver, Denver, CO, USA
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
5
Abstract
This work presents a new gas pressure sensing technique based on self-sustained oscillations in micromechanical thermal-piezoresistive resonators. Electrothermal force generation in such structures can be coupled to the structural stress through the piezoresistive effect. This could lead to spontaneous mechanical vibrations in the resonant structures upon application of a large enough DC bias current. It has been demonstrated via measurements that resonant frequency of such oscillators is sharply dependent on the surrounding gas pressure. For a 3.46MHz thermal piezoresistive oscillator, frequency shift of -2300ppm was observed by changing the surrounding air pressure from 84kPa to 43kPa. In addition, the same structure was also operated in a forced excitation mode as a resonator actuated by a combination of DC and AC currents. Interestingly, the frequency shift in the self-sustained oscillation mode is far more significant than the frequency shift in forced resonance mode and is opposite in direction. In order to explain this observation, a mathematical model has been developed for the thermal-piezoresistive oscillators. The final solution from this model indicates that the dynamic stiffness of the spontaneously vibrating structures decreases as the value of the damping coefficient is reduced at lower gas pressures.
Keywords
elasticity; frequency measurement; gas sensors; micromechanical resonators; microsensors; oscillations; piezoresistive devices; pressure sensors; vibrations; AC currents; DC currents; dynamic stiffness; electro thermal force generation; forced excitation mode; frequency 3.46 MHz; frequency shift; mathematical model; micromechanical resonant gas pressure sensor; micromechanical thermal piezoresistive resonator; piezoresistive effect; pressure 84 kPa to 43 kPa; resonant frequency measurement; resonant structure; self-sustained oscillation; spontaneous mechanical vibration; structural stress; thermal piezoresistive oscillator; Actuators; Damping; Frequency measurement; Oscillators; Resonant frequency; Sensors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411382
Filename
6411382
Link To Document