DocumentCode :
2950110
Title :
Interface Effects in Tri-layer IrMn Exchange Biased Systems
Author :
Huerrich, C. ; Dutson, J.D. ; Mao, S. ; Grady, K.O.
Author_Institution :
York Univ., York
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
953
Lastpage :
953
Abstract :
This work investigates interface and annealing effects in tri-layer IrMn exchange biased systems. Two samples have been studied with the same initial structure of SiSiO2NiCr(5 nm)CoFe(12 nm)IrMn(5 nm): Sample A had CoFe (8 nm) and sample B hadNiFe (10 nm). There was also an additional NiCr(5 nm) capping layer to prevent corrosion. The different thicknesses of the top layer and bottom layers of the tri-layer stack enables identification of each layer on the hysteresis loop. Samples were measured as prepared and after annealing at 200, 250 and 300degC for 4 hours in a saturating field of 1 kOe. This paper also discusses the separate effects of the interface and particularly the grain size distribution in the antiferromagnetic layer on both the exchange bias and coercivity.
Keywords :
annealing; antiferromagnetic materials; chromium alloys; cobalt alloys; coercive force; exchange interactions (electron); ferromagnetic materials; grain size; iridium alloys; iron alloys; magnetic hysteresis; magnetic multilayers; manganese alloys; nickel alloys; silicon; silicon compounds; Si-SiO2-NiCr-CoFe-IrMn; annealing; antiferromagnetic layer; coercivity; corrosion; exchange bias; grain size distribution; hysteresis loop; interface; temperature 200 degC; temperature 250 degC; temperature 300 degC; time 4 hour; tri-layer exchange biased systems; Annealing; Antiferromagnetic materials; Coercive force; Corrosion; Grain size; Magnetic field measurement; Magnetic hysteresis; Physics; Temperature measurement; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.374984
Filename :
4262386
Link To Document :
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