Title :
Photoresist polymeric materials for 157 nm photolithography
Author :
Sarantopoulou, E. ; Cefalas, A.C. ; Gogolides, Evangelos ; Argitis, P.
Author_Institution :
Theor. & Phys. Chem. Inst., Nat. Hellenic Res. Found., Athens, Greece
Abstract :
Summary form only given. In this communication we are reporting results from the absorbance and the outgassing studies for photoresist candidates for 157 nm lithography. Several materials have been studied for their absorption below 200 nm, and one typical epoxy novolac material, and one t-boc protected acrylate are studied for outgassing, as a first contribution on this subject.
Keywords :
outgassing; photoresists; polymer films; ultraviolet lithography; 157 nm; VUV lithography; absorbance; epoxy novolac; outgassing; photoresist; polymeric material; t-boc protected acrylate; Absorption; Atom lasers; Chemical lasers; Chemistry; Laser applications; Laser theory; Lithography; Optical materials; Polymer films; Resists;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909966
