Fully-integrated low-consumption BiFET low-noise amplifier for WCDMA applications

Author

Moreira, C.P. ; Kerherve, E. ; Jarry, P. ; Belot, D.

Author_Institution

CNRS, Univ. of Bordeaux, Bordeaux

fYear

2005

fDate

11-14 Dec. 2005

Firstpage

1

Lastpage

4

Abstract

This paper presents guidelines to design a fully-integrated low-consumption BiFET low-noise amplifier targeted to WCDMA-FDD (2110-2170 MHz) system applications. It uses a high performance 0.25-mum SiGe:C BiCMOS7RF process from STMicroelectronics. The main motivation of this work is to evidence the advantages of a mixed Bipolar mosFET (BiFET) cascode topology, mainly in terms of linearity and power consumption. The LNA achieves a power gain of around 15.8 dB (250 MHz -1 dB bandwidth), a noise figure of 1.76 dB, an ICP1 and IIP3 of -9 dBm and 0 dBm, respectively. It consumes only 3.3 mW under 2.2 V supply voltage.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; code division multiple access; frequency division multiplexing; integrated circuit design; low noise amplifiers; BiCMOS7RF process; BiFET low-noise amplifier; SiGe:C; UHF amplifiers; bipolar MOSFET; frequency 2110 MHz to 2170 MHz; frequency division duplexing; noise figure 1.76 dB; power 3.3 mW; size 0.25 mum; voltage 2.2 V; wireless code division multiple access; Bandwidth; Energy consumption; Guidelines; Linearity; Low-noise amplifiers; Multiaccess communication; Noise figure; Power MOSFET; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on

Conference_Location

Gammarth

Print_ISBN

978-9972-61-100-1

Electronic_ISBN

978-9972-61-100-1

Type

conf

DOI

10.1109/ICECS.2005.4633440

Filename

4633440