Title :
Feasibility of AlGaInAs lasers for high speed uncooled communication systems
Author :
Onischenko, A.I. ; Williams, K.A. ; Massara, A.B. ; Yong, J.C.L. ; Rorison, J.M. ; Penty, Richard V. ; White, J.H.
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
Abstract :
Summary form only. There has recently been renewed interest in AlGaInAs 1.3/1.55 /spl mu/m lasers for high speed data communications. This laser system is an attractive alternative to the traditional GaInAsP lasers predominately because of higher characteristic temperature, T/sub 0/. For example, in the past year, T/sub 0/ values for AlGaInAs lasers have typically been observed to be around 80 K. This improved temperature sensitivity is crucial for future high speed uncooled data communications systems where active components may be required to operate at temperatures as high as 80-90/spl deg/C. To date however little analysis has considered the high temperature, high speed operation of InGaAsP devices. In this paper therefore we have evaluated the feasibility of AlGaInAs lasers for high-speed modulation at high temperatures.
Keywords :
III-V semiconductors; aluminium compounds; data communication; gallium compounds; indium compounds; optical transmitters; semiconductor lasers; 1.3 mum; 1.3/1.55 /spl mu/m lasers; 1.55 mum; 80 to 90 C; AlGaInAs; AlGaInAs lasers; GaInAsP lasers; active components; characteristic temperature; high speed data communications; high speed uncooled communication systems; high speed uncooled data communications systems; high-speed modulation; temperature sensitivity; High speed optical techniques; Nonlinear optics; Optical pulse generation; Optical pulses; Oscillators; Space vector pulse width modulation;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.909980