Title :
New power MOSFET selection method to avoid failures
Author :
Jordán, J. ; Esteve, V. ; García-Gil, R. ; Sanchis, E. ; Maset, E. ; Dede, E.
Author_Institution :
Dept. d´´Enginyeria Electron., Valencia Univ., Spain
Abstract :
Power MOSFET are the primary cause of failure at high power inverters. The turning on of the parasitic bipolar transistor during hard turn off of the intrinsic body diode causes the failures. We propose to test MOSFET from different manufacturers under controlled laboratory conditions. The worst switching condition and the most robust MOSFET was then identified.
Keywords :
bipolar transistors; capacitor switching; diodes; failure analysis; invertors; power MOSFET; semiconductor device manufacture; semiconductor device testing; bipolar transistor; high power inverter failure; intrinsic body diode; power MOSFET selection method; Bipolar transistors; Diodes; Inverters; Laboratories; MOSFET circuits; Manufacturing; Power MOSFET; Robustness; Testing; Turning;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN :
0-7803-8269-2
DOI :
10.1109/APEC.2004.1295984
