DocumentCode :
2950797
Title :
Terabit/s parallel optical connections to silicon CMOS chips: lessons learned from the SPOEC technology demonstrator
Author :
Walker, A.C.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. We have assembled the components of an optoelectronic 16 Gbit/s crossbar switch designed to include, internally, an optical data rate to a hybrid InGaAs/silicon chip in the Tbit/s regime. Input to the demonstrator is by an 8 x 8 VCSEL array operating at 250 Mbit/s/channel. These 64 channels are fanned out 8 x 8 times, using diffractive optics, to give the high overall data rate (Tbit/s) onto the hybrid switching chip. This chip includes an array of 4096 InGaAs-based p-i-n detectors solder-bump bonded to silicon CMOS.
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; data communication; gallium arsenide; indium compounds; optical interconnections; parallel architectures; photodetectors; 0.6 mum; 16 Gbit/s; 250 Mbit/s; 8 x 8 VCSEL array; InGaAs; InGaAs-based p-i-n detectors; Mbit/s/channel; SPOEC technology demonstrator; Si; Tbit/s regime; Terabit/s parallel optical connections; diffractive optics; high overall data rate; hybrid InGaAs/silicon chip; hybrid switching chip; optical data rate; optoelectronic Gbit/s crossbar switch; silicon CMOS; silicon CMOS chips; solder-bump bonded; Assembly; Indium gallium arsenide; Optical design; Optical devices; Optical diffraction; Optical switches; PIN photodiodes; Sensor arrays; Silicon; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.910006
Filename :
910006
Link To Document :
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