Title :
Impact of microcavity regime on low voltage InGaAs Fabry-Perot modulators
Author :
Byrne, Dallan ; Horan, P. ; Hegarty, J.
Author_Institution :
Dept. of Phys., Trinity Coll., Dublin, Ireland
Abstract :
Summary form only. Low voltage InGaAs MQW pin Fabry-Perot modulator structures are at the boundary of the microcavity regime. Here work is presented on the impact of the microcavity regime on the modulator performance.
Keywords :
Fabry-Perot resonators; III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; micro-optics; micromechanical resonators; semiconductor quantum wells; InGaAs; InGaAs MQW pin Fabry-Perot modulator; low voltage; microcavity regime; modulator performance; Fabry-Perot; Indium gallium arsenide; Large Hadron Collider; Light emitting diodes; Lighting; Low voltage; Microcavities; Photoconductivity; Transmitters; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910008
