Title :
Critical current densities of high-Tc superconductors
Author :
Hitotsuyanagi, Hajime ; Sato, Ken-Ichi ; Takano, Satoshi ; Nagata, Masayuki
Author_Institution :
Sumito Electr. Ind. Ltd., Osaka, Japan
Abstract :
The most important property affecting the usefulness high-T c superconductors is the critical current density. With wire applications in mind, three kinds of fabrication process, solid reaction, film, and melt, were studied to improve the transport critical current densities (Jc) at liquid nitrogen temperatures (77.3 K). In all three processes, Jc above 104 A/cm2 was obtained without an applied magnetic field. In the solid-reaction process, silver-sheathed BiPbSrCaCuO tapes with Jc of 12600 A/cm2 were fabricated. The homogenization of the high-Tc phase (110 K), preferred alignment of the grains, and good contact at the grain boundaries resulted in the improvement of Jc . In thin-film YBaCuO, Jc of 4 ×106 A/cm2 was obtained by fabricating films with a flat surface and c-axis-oriented single-like crystals. In the melt process, oriented polycrystalline BiSrCaCuO rods with Jc of 14800 A/cm2 were fabricated. Magnetic field dependencies of the Jc of each sample were studied. Thin films of YBaCuO maintained the value of 104 A/cm2 even in 20 T
Keywords :
barium compounds; bismuth compounds; calcium compounds; critical current density (superconductivity); high-temperature superconductors; lead compounds; magnetic field effects; strontium compounds; yttrium compounds; 110 K; 20 T; 77.3 K; Ag-BiPbSrCaCuO tapes; BiSrCaCuO orientated polycrystalline rods; c-axis-oriented single-like crystals; critical current density; fabrication process; flat surface films; grain alignment; grain boundaries; high temperature superconductors; high-Tc superconductors; magnetic field dependences; melt process; silver sheathed tapes; solid-reaction process; thin film YBaCuO; wire applications; Critical current density; Fabrication; High temperature superconductors; Magnetic fields; Solids; Superconducting films; Superconductivity; Transistors; Wire; Yttrium barium copper oxide;
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
DOI :
10.1109/ECC.1989.77720