Title :
Microfabrication processes for high-Jc superconducting films
Author :
Tsuge, H. ; Matsui, S.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
An investigation of microfabrication processes for Y-Ba-Cu-O films using ion-beam techniques is discussed. Compared with Ar ion-beam etching (IBE), Cl2 reactive ion-beam etching (RIBE) enhanced sputtering yield at 400-V acceleration voltage. Maskless etching was carried out using a 130-keV Au+ focused ion beam (FIB) with a 0.1-μm-diameter beam. A 50-nm-thick film was patterned into 0.3-μm-wide lines at a dose of 5×1016 ions/cm2 . Ion implantation with a 300-keV Si++ FIB suggested the possibility of making submicron patterns by selectively modifying film properties from superconductive to normal. High-Tc superconducting lines as narrow as 0.8 μm have been fabricated from epitaxial YBa2Cu3O7-y films by IBE combined with FIB lithography. The resulting lines, 1.3-μm wide and 2-mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9×104 A/cm2 at 77.3 K
Keywords :
high-temperature superconductors; ion implantation; silicon; sputter etching; superconducting epitaxial layers; 0.3 micron; 0.8 micron; 1.3 micron; 130 keV; 2 mm; 300 keV; 400 V; 50 nm; 77.3 K; 81 K; Au+ focused ion beam; Cl2 reactive ion-beam etching; FIB; IBE; RIBE; Si2+ focused ion beam; Y-Ba-Cu-O superconducting films; YBa2Cu3O7-y epitaxial films; acceleration voltage; critical current density; film properties; focused ion-beam lithography; high temperature superconductor; ion implantation; ion-beam techniques; maskless etching; microfabrication processes; sputtering yield; submicron patterns; superconducting lines; zero resistance temperature; Acceleration; Argon; Gold; Identity-based encryption; Ion beams; Sputter etching; Sputtering; Superconducting films; Voltage; Yttrium barium copper oxide;
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
DOI :
10.1109/ECC.1989.77721
