DocumentCode
2951275
Title
Fabrication of superhydrophobic surface using surface texturing with nano-sized structure and PTFE film
Author
JungHwa Oh ; DaeYoung Kong ; SungBo Seo ; Dongyoung Kim ; Hwamin Kim ; ChanSeob Cho ; Jonghyun Lee ; Bonghwan Kim
Author_Institution
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
We developed a superhydrophobic surface using surface texturing with nano-sized structure and polytetrafluoroethylene (PTFE) film deposition. The properties of superhydrophobic surface were investigated using water contact angle, root mean square (RMS) roughness, and X-ray photoelectron spectroscopy (XPS). The contact angle of a water droplet was greater than 150°, which means extremely low wettability is achievable on superhydrophobic surfaces. For nano-sized structure, we carried out two step etching process using reactive ion etching (RIE) in a large pyramid substrate by potassium hydroxide (KOH) solution. Metal mesh installed RIE etched silicon substrate using SF6 and O2 gas. PTFE films were deposited by conventional RF magnetron sputtering. This process is applicable for stable superhydrophobic and self-cleaning surfaces due to hierarchical structures formed silicon wafer etched by RIE technique.
Keywords
X-ray photoelectron spectra; contact angle; hydrophobicity; nanofabrication; sputter deposition; sputter etching; surface cleaning; surface roughness; surface texture; PTFE film; RF magnetron sputtering; Si; X-ray photoelectron spectroscopy; large pyramid substrate; metal mesh; nanosized structure; polytetrafluoroethylene film deposition; potassium hydroxide solution; reactive ion etching; root mean square roughness; self-cleaning surface; superhydrophobic surface fabrication; surface texturing; two step etching process; water contact angle; water droplet; Films; Nanostructures; Rough surfaces; Silicon; Substrates; Surface roughness; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411450
Filename
6411450
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