Title :
An embedded IDDQ testing circuit and technique
Author :
Matakias, S. ; Tsiatouhas, Y. ; Arapoyanni, A. ; Haniotakis, Th
Author_Institution :
Dept. of Inf.&Telecommun., Univ. of Athens, Athens
Abstract :
Quiescent current (IDDQ) testing is a valuable defect detection technique in CMOS ICs. However, its application in very deep submicron technologies is susceptible to the increased transistor leakage current. In this paper, an IDDQ testing technique and circuit are presented based on the background current compensation concept. This technique is independent from process and temperature variations and first experimental results from a fabricated circuit show that it is able to extend the viability of IDDQ testing in future nanometer technologies.
Keywords :
CMOS integrated circuits; integrated circuit testing; leakage currents; CMOS integrated circuits; background current compensation; defect detection; integrated circuit testing; quiescent current testing; transistor leakage current; CMOS technology; Circuit faults; Circuit testing; Fluctuations; Informatics; Leakage current; Manufacturing processes; Temperature; Turning; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-9972-61-100-1
Electronic_ISBN :
978-9972-61-100-1
DOI :
10.1109/ICECS.2005.4633505