Title :
Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 μm
Author :
Valdueza-Felip, S. ; Naranjo, F.B. ; Gonzalez-Herraez, Miguel ; Fernandez, Hector ; Solis, J. ; Fernandez, S. ; Guillot, F. ; Monroy, E. ; Grandal, J. ; Sanchez-Garcia, M.A.
Author_Institution :
Alcala Univ., Madrid
Abstract :
We characterize the third order nonlinear optical response of the interband transition of bulk InN and the intraband transition of GaN/AIN quantum dots, both of them in the spectral region around 1.5 mufrac14m. The results show that these materials can be very suitable for optical signal processing applications in the spectral region of wavelength-division multiplexed (WDM) transmission. Considering the temporal behavior of the nonlinear response, InN seems particularly useful in all-optical control of light speed (slow-light generation), whereas GaN/AIN quantum dots are promising for switching and wavelength conversion applications.
Keywords :
aluminium compounds; gallium compounds; nitrogen compounds; optical signal detection; quantum dots; wavelength division multiplexing; GaN-AlN; interband transition; light speed optical control; nitride based materials; nonlinear optical signal processing; optical control; quantum dots; size 1.5 mum; third order nonlinear optical response; wavelength conversion; wavelength-division multiplexed transmission; Fiber nonlinear optics; Gallium nitride; Nonlinear optical devices; Nonlinear optics; Optical materials; Optical mixing; Optical signal processing; Optical wavelength conversion; Quantum cascade lasers; Stimulated emission; Kerr effects; four-wave mixing; nitride-based devices; photonic signal processing; third-order susceptibility;
Conference_Titel :
Intelligent Signal Processing, 2007. WISP 2007. IEEE International Symposium on
Conference_Location :
Alcala de Henares
Print_ISBN :
978-1-4244-0829-0
Electronic_ISBN :
978-1-4244-0830-6
DOI :
10.1109/WISP.2007.4447511
