Title :
Electronics properties of anodic oxidized films grown in pure water at various annealing temperature
Author_Institution :
Lab. d´´Eectrification des Entreprises Industrielles, Univ. M´´hamed Bougara de Boumerdes, Boumerdes
Abstract :
In this work MOS capacitors with anodic oxides (9 nm) were elaborated.The anodic silica films (SiO2) were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at ambient temperature, with a constant current density of 20 muA/cm2. Film thickness increases linearly as a function of total charge during oxidation. The oxides are characterized by current-voltage and capacitance-voltage measurements at various annealing temperature.
Keywords :
MOS capacitors; electrolysis; silicon compounds; SiO2; ambient temperature; annealing temperature; anodic oxidized film; capacitance-voltage measurement; current-voltage measurement; electrolysis cell; electronics properties; monocristalline silicon wafer; pure water; size 9 nm; Annealing; Capacitance-voltage characteristics; Current density; Electrochemical processes; MOS capacitors; Oxidation; Semiconductor films; Silicon compounds; Temperature; Water; Anodic oxidation; Electrical characterisation; Fixed Charges; Pure water; Si/SiO2; interface States density;
Conference_Titel :
Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
Conference_Location :
Gammarth
Print_ISBN :
978-9972-61-100-1
Electronic_ISBN :
978-9972-61-100-1
DOI :
10.1109/ICECS.2005.4633523
