Electronics properties of anodic oxidized films grown in pure water at various annealing temperature

Author

Nadji, Bécharia

Author_Institution

Lab. d´´Eectrification des Entreprises Industrielles, Univ. M´´hamed Bougara de Boumerdes, Boumerdes

fYear

2005

fDate

11-14 Dec. 2005

Firstpage

1

Lastpage

4

Abstract

In this work MOS capacitors with anodic oxides (9 nm) were elaborated.The anodic silica films (SiO2) were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at ambient temperature, with a constant current density of 20 muA/cm². Film thickness increases linearly as a function of total charge during oxidation. The oxides are characterized by current-voltage and capacitance-voltage measurements at various annealing temperature.

Keywords

MOS capacitors; electrolysis; silicon compounds; SiO₂; ambient temperature; annealing temperature; anodic oxidized film; capacitance-voltage measurement; current-voltage measurement; electrolysis cell; electronics properties; monocristalline silicon wafer; pure water; size 9 nm; Annealing; Capacitance-voltage characteristics; Current density; Electrochemical processes; MOS capacitors; Oxidation; Semiconductor films; Silicon compounds; Temperature; Water; Anodic oxidation; Electrical characterisation; Fixed Charges; Pure water; Si/SiO2; interface States density;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on

Conference_Location

Gammarth

Print_ISBN

978-9972-61-100-1

Electronic_ISBN

978-9972-61-100-1

Type

conf

DOI

10.1109/ICECS.2005.4633523

Filename

4633523