Numerical and experimental analysis of pulsed excimer laser processing of SiC

Summary form only given. Silicon carbide (SiC) is a wide-gap semiconductor which presents unique material properties especially suitable for high temperature, high power and high frequency applications. However, SiC device fabrication has to face to various technological difficulties. Among them, one of the more crucial appears to be the doping step. As an alternative to classical thermal heating, laser processing was recently demonstrated to be suitable for the doping of SiC. The use of high powerful pulsed laser beams in the nanosecond duration regime allows to deposit a large amount of energy in short time into the near-surface region, while maintaining the substrate essentially at room temperature. We investigated the thermal behaviour both of crystalline and amorphized SiC under pulsed excimer laser treatment of different wavelengths (193, 248 and 308 nm) and pulse durations (20 to 200 nsec).