DocumentCode :
2951800
Title :
KrF excimer treatment of aluminium nitride
Author :
Yaghdjian, L. ; Meja, P. ; Autric, M.
Author_Institution :
IRPHE, CNRS, Marseille, France
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. Aluminium nitride ceramic (AlN) is a very attractive material for advanced technological applications. It has a heat conductivity (180 Wm/sup -1/ K/sup -1/) comparable to most conductive metals and much greater than typical ceramics at room temperature. Its high electrical resistivity (>10/sup 14/ /spl Omega/cm), good dielectric strength, thermal expansion (5/spl middot/10/sup -6/ K/sup -1/) closely match to silicon and lack of toxicity are ideal for microelectronic substrate applications. After a KrF excimer laser irradiation of AlN, the surface becomes electrically conductive. This effect could be interesting for a microelectronic application to produce small conductive lines in one individual operation.
Keywords :
aluminium compounds; ceramics; electric strength; electrical resistivity; excimer lasers; laser ablation; AlN; KrF; KrF excimer laser irradiation; KrF excimer treatment; advanced technological applications; aluminium nitride; aluminium nitride ceramic; conductive metals; electrical conductive; good dielectric strength; heat conductivity; high electrical resistivity; microelectronic application; microelectronic substrate applications; room temperature; small conductive lines; surface; thermal expansion; Aluminum; Ceramics; Conducting materials; Conductivity; Dielectric breakdown; Dielectric materials; Electric resistance; Microelectronics; Temperature; Thermal expansion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.910065
Filename :
910065
Link To Document :
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