Title :
A 5.2 GHz 3.3 V I/Q SiGe RF transceiver
Author :
Plouchart, Jean-Olivier ; Ainspan, Herschel ; Soyuer, Mehmet
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 5.2 GHz I/Q RF transceiver using a 0.5-μm SiGe BiCMOS technology is designed and measured. The receiver exhibits a 11.7 dB down-conversion gain, a DSB noise figure of 7.5 dB, an input IP3 of -11.2 dBm, and an amplitude imbalance of 0.33 dB for a 300 MHz IF. For the transmitter an up-conversion gain of 14.7 dB, an output 1 dB compression point of -23 dBm, an amplitude imbalance of 0.5 dB, and a 7 GHz 3 dB bandwidth were measured. The power consumption is 122 mW for the receiver and 114 mW for the transmitter at 3.3 V power supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; digital radio; integrated circuit design; integrated circuit noise; land mobile radio; microwave links; mixed analogue-digital integrated circuits; semiconductor materials; transceivers; 0.5 micron; 11.7 dB; 114 mW; 122 mW; 14.7 dB; 3 dB bandwidth; 3.3 V; 5.2 GHz; 7 GHz; 7.5 dB; BiCMOS technology; DSB noise figure; I/Q RF transceiver; SiGe; amplitude imbalance; down-conversion gain; output compression point; power consumption; up-conversion gain; Bandwidth; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Noise figure; Q measurement; Radio frequency; Silicon germanium; Transceivers; Transmitters;
Conference_Titel :
Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5443-5
DOI :
10.1109/CICC.1999.777277
