DocumentCode
2952026
Title
Crystalline carbon nitride films coherently grown on Si[100] substrates by reactive pulsed laser ablation
Author
Banicca, G. ; Elia, L. ; Fernandez, M. ; Luches, A. ; Majni, G. ; Martino, M. ; Mengucci, P.
Author_Institution
Dipt. di Sci. dei Mater. e della Terra, Ancona Univ., Italy
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only. The prediction of a covalently bound carbon nitride solid /spl beta/-C/sub 3/N/sub 4/ with characteristics (hardness, bulk modulus) comparable to or even better than those of diamond, stimulated many attempts to synthesise and deposit thin films of this material. Pulsed laser ablation is among the most promising technique to achieve this result.
Keywords
X-ray diffraction; carbon compounds; optical films; pulsed laser deposition; /spl beta/-C/sub 3/N/sub 4/; C/sub 3/N/sub 4/; Si; Si[100] substrates; bulk modulus; coherently grown; covalently bound carbon nitride; crystalline carbon nitride films; diamond; hardness; pulsed laser ablation; reactive pulsed laser ablation; thin films; Crystallization; Optical pulses; Pulsed laser deposition; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.910075
Filename
910075
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