DocumentCode
2952028
Title
Performance characteristics of 14 nm near threshold MCML circuits
Author
Shapiro, Amir ; Friedman, Eby G.
Author_Institution
Dept. of Electr. Eng., Univ. of Rochester, Rochester, NY, USA
fYear
2013
fDate
7-10 Oct. 2013
Firstpage
1
Lastpage
2
Abstract
Near threshold circuits (NTC) are an attractive and promising technology that provides significant power savings with some delay penalty. The feasibility of NTC technology with MOS Current Mode Logic (MCML) based on a 14 nm FinFET process node is examined in this paper. A 32 bit Kogge Stone adder is chosen as a demonstration vehicle for simulation and feasibility analysis. MCML yields enhanced power efficiency when operated with a 100% activity factor above 1 GHz as compared to CMOS. Standard CMOS does not achieve frequencies above 9 GHz without a dramatic increase in power consumption. MCML is most efficient beyond 9 GHz over a wide range of activity factors. MCML also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors.
Keywords
MOS logic circuits; MOSFET; adders; current-mode circuits; current-mode logic; FinFET process node; Kogge stone adder; MOS current mode logic; NTC technology; delay penalty; near-threshold MCML circuits; noise level; power consumption; power efficiency; power savings; size 14 nm; standard CMOS; Adders; CMOS integrated circuits; Logic gates; Noise; Semiconductor device modeling; Standards; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/S3S.2013.6716545
Filename
6716545
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