Title :
Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology
Author :
Ben Akkez, I. ; Fenouillet-Beranger, C. ; Cros, A. ; Balestra, F. ; Ghibaudo, Gerard
Author_Institution :
CEA-LETI MINATEC, Grenoble, France
Abstract :
In this work, we study the effect of the back biasing on the effective mobility in Ultra-Thin Box Fully Depleted SOI devices. Thanks to the carrier mobility extraction on large N & PMOS transistors, for thin (GO1) and thick gate oxide (GO2), the important role of the surface roughness and effective field in the mobility reduction is highlighted. Moreover, for the first time these electrical results have been corroborated by Poisson equation coupled with Hansch´s quantum simulations.
Keywords :
MOSFET; Poisson equation; carrier mobility; high-k dielectric thin films; silicon-on-insulator; surface roughness; Hansch quantum simulation; NMOS transistors; PMOS transistors; Poisson equation; UTBOX FDSOI high-k metal gate technology; back biasing; carrier mobility extraction; effective mobility; mobility enhancement; mobility reduction; surface roughness; thick-gate oxide; thin-gate oxide; ultrathin-box fully-depleted SOI devices; Capacitance; Electric fields; Logic gates; MOS devices; Rough surfaces; Silicon; Surface roughness; Effective mobility; UTB FDSOI; surface roughness;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716551
