Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology

Author

Ben Akkez, I. ; Fenouillet-Beranger, C. ; Cros, A. ; Balestra, F. ; Ghibaudo, Gerard

Author_Institution

CEA-LETI MINATEC, Grenoble, France

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

In this work, we study the effect of the back biasing on the effective mobility in Ultra-Thin Box Fully Depleted SOI devices. Thanks to the carrier mobility extraction on large N & PMOS transistors, for thin (GO1) and thick gate oxide (GO2), the important role of the surface roughness and effective field in the mobility reduction is highlighted. Moreover, for the first time these electrical results have been corroborated by Poisson equation coupled with Hansch´s quantum simulations.

Keywords

MOSFET; Poisson equation; carrier mobility; high-k dielectric thin films; silicon-on-insulator; surface roughness; Hansch quantum simulation; NMOS transistors; PMOS transistors; Poisson equation; UTBOX FDSOI high-k metal gate technology; back biasing; carrier mobility extraction; effective mobility; mobility enhancement; mobility reduction; surface roughness; thick-gate oxide; thin-gate oxide; ultrathin-box fully-depleted SOI devices; Capacitance; Electric fields; Logic gates; MOS devices; Rough surfaces; Silicon; Surface roughness; Effective mobility; UTB FDSOI; surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716551

Filename

6716551