DocumentCode :
2952221
Title :
Hybrid simulation using functional single-electron transistor models
Author :
Sarmiento-Reyes, Arturo ; González, Francisco Javier Castro ; Luis, L.
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
fYear :
2011
fDate :
23-25 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Recent advances in the fabrication of single-electron devices (SEDs) and the forthcoming combination of them with nanometric CMOS transistors to form hybrid circuits forcibly put in scene the need of solid and robust simulation methodologies for these classes of circuits. In this paper a verification path that incorporates functional models for the SEDs in order to achieve simulation of bybrid circuits is expound. Several examples illustrate the application of the verification methodology.
Keywords :
single electron transistors; functional single-electron transistor models; hybrid simulation; nanometric CMOS transistors; single-electron devices; Analytical models; Data models; Equations; Integrated circuit modeling; Mathematical model; Semiconductor device modeling; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2011 IEEE Second Latin American Symposium on
Conference_Location :
Bogata
Print_ISBN :
978-1-4244-9484-2
Type :
conf
DOI :
10.1109/LASCAS.2011.5750286
Filename :
5750286
Link To Document :
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