DocumentCode
2952252
Title
Behavioral model of charge pumps with VHDL
Author
Mita, Rosario ; Palumbo, Gaetano ; Pennisi, Melita
Author_Institution
DIEES, Univ. of Catania, Catania
fYear
2005
fDate
11-14 Dec. 2005
Firstpage
1
Lastpage
4
Abstract
A behavioral model of an N-stages charge pump is here presented. The description language used to develop the model is the VHDL thus permitting simulations of both digital and analog systems, such as nonvolatile memories. Moreover, the presented model allows a huge reduction in the simulation time also maintaining a good agreement with transistor level simulations. For a useful comparison, a three stages charge pump was simulated with Symphony EDA Sonata (event-driven VHDL simulator) and Spectre (transistor level simulator). The obtained result confirmed the validity of the developed description in terms of accuracy and low required simulation´s time.
Keywords
analogue integrated circuits; hardware description languages; integrated circuit modelling; random-access storage; N-stages charge pump; Spectre; Symphony EDA Sonata; event-driven VHDL simulator; nonvolatile memories; simulation time; transistor level simulations; Charge pumps; Circuit simulation; Discrete event simulation; Electronic design automation and methodology; Mathematical model; Nonvolatile memory; Power supplies; Power transmission lines; Switching converters; Time to market;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
Conference_Location
Gammarth
Print_ISBN
978-9972-61-100-1
Electronic_ISBN
978-9972-61-100-1
Type
conf
DOI
10.1109/ICECS.2005.4633558
Filename
4633558
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