• DocumentCode
    2952252
  • Title

    Behavioral model of charge pumps with VHDL

  • Author

    Mita, Rosario ; Palumbo, Gaetano ; Pennisi, Melita

  • Author_Institution
    DIEES, Univ. of Catania, Catania
  • fYear
    2005
  • fDate
    11-14 Dec. 2005
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A behavioral model of an N-stages charge pump is here presented. The description language used to develop the model is the VHDL thus permitting simulations of both digital and analog systems, such as nonvolatile memories. Moreover, the presented model allows a huge reduction in the simulation time also maintaining a good agreement with transistor level simulations. For a useful comparison, a three stages charge pump was simulated with Symphony EDA Sonata (event-driven VHDL simulator) and Spectre (transistor level simulator). The obtained result confirmed the validity of the developed description in terms of accuracy and low required simulation´s time.
  • Keywords
    analogue integrated circuits; hardware description languages; integrated circuit modelling; random-access storage; N-stages charge pump; Spectre; Symphony EDA Sonata; event-driven VHDL simulator; nonvolatile memories; simulation time; transistor level simulations; Charge pumps; Circuit simulation; Discrete event simulation; Electronic design automation and methodology; Mathematical model; Nonvolatile memory; Power supplies; Power transmission lines; Switching converters; Time to market;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2005. ICECS 2005. 12th IEEE International Conference on
  • Conference_Location
    Gammarth
  • Print_ISBN
    978-9972-61-100-1
  • Electronic_ISBN
    978-9972-61-100-1
  • Type

    conf

  • DOI
    10.1109/ICECS.2005.4633558
  • Filename
    4633558