Thermal stability of ultra-thin InGaAs-on-insulator substrates

Author

Daix, N. ; Czornomaz, L. ; Caimi, D. ; Rossel, C. ; Sousa, M. ; Fompeyrine, J.

Author_Institution

IBM Res. - Zurich, Rüschlikon, Switzerland

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

Ultra-thin-body on buried oxide (UTBB) InGaAs are promising layers for the next generation of transistors. One way to fabricate InGaAs layer on Si or SiGe substrates is the direct wafer bonding technique with ion implantation and thermal splitting. We have investigated the bonding energy of two possible candidates for the buried oxide (BOX), Al₂O₃ and SiO₂, between room temperature and 450°C. Then we have compared the properties of InAlAs, InP and InGaAs buffers for the implantation and splitting processes.

Keywords

III-V semiconductors; aluminium compounds; buried layers; gallium arsenide; indium compounds; semiconductor doping; silicon compounds; thermal stability; wafer bonding; Al₂O₃; InAlAs; InGaAs; InP; SiO₂; UTBB; direct wafer bonding technique; implantation process; ion implantation; splitting process; thermal splitting; thermal stability; ultrathin body on buried oxide; ultrathin substrates; Bonding; Indium gallium arsenide; Indium phosphide; Silicon; Substrates; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716558

Filename

6716558