Influence of photon recycling on the performance of light emitting diodes with nonuniform injection

Author

Khmyrova, Irina ; Tsutsui, N. ; Ryzhii, V. ; Ikegami, T.

Author_Institution

Aizu Univ., Japan

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. Photon recycling associated with the reabsorption of trapped photons strongly affects the performance of light emitting diodes (LEDs). It significantly enhances the LED external quantum efficiency. We use a phenomenological model of the electron and photon transport to calculate characteristics of LEDs with nonuniform injection taking into account the effect of photon recycling. We consider double heterostructure LEDs with a narrow-gap p-doped active region clad between two wide-gap confining layers. The LED structure has a strip top contact injecting electrons and a wide bottom contact injecting holes. Due to the relatively small area of one of the contacts, the electron injection is pronouncedly nonuniform. The bottom of the LED is provided with a mirror.

Keywords

light emitting diodes; semiconductor device models; semiconductor heterojunctions; LED structure; bottom contact; double heterostructure LEDs; electron injection; electron transport; external quantum efficiency; hole injection; light emitting diodes; mirror; narrow-gap p-doped active region; nonuniform injection; performance; phenomenological model; photon recycling; photon transport; reabsorption; strip top contact; trapped photons; wide-gap confining layers; Charge carrier processes; Diode lasers; Electrons; Equations; Laser beams; Light emitting diodes; Mirrors; Optical reflection; Recycling; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910089

Filename

910089