DocumentCode
2952276
Title
Higher efficiency three-level inverter employing IEGTs
Author
Ichikawa, Kohsaku ; Tsukakoshi, Masahiko ; Nakajima, Ryo
Author_Institution
Toshiba Mitsubishi-Electr. Ind. Syst. Corp., Tokyo, Japan
Volume
3
fYear
2004
fDate
2004
Firstpage
1663
Abstract
A higher efficiency is one of the important features required on large capacity converters. As high voltage and large capacity power semiconductor devices replacing conventional GTO thyristors, 4.5 kV IEGTs (injection enhanced gate transistors) and IGBTs have been placed on the market, for use in inverters for driving large motors of rolling mills, pumps, compressors, etc and in converters for SVCS for power systems. This paper describes an 8 MVA three-level converter-inverter that employs an improved 4.5 kV - 5.5 kA press-packaged IEGT, featuring 99% in measured efficiency.
Keywords
insulated gate bipolar transistors; invertors; power convertors; power semiconductor devices; thyristors; 4.5 kV; 4.5 to 5.5 kV; 8 MVA; GTO thyristors; IEGT; SVCS; compressors; converters; injection enhanced gate transistors; power semiconductor devices; pumps; rolling mills; three-level converter-inverter; Anodes; Diodes; Driver circuits; Inductors; Insulated gate bipolar transistors; Inverters; Packaging; Snubbers; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN
0-7803-8269-2
Type
conf
DOI
10.1109/APEC.2004.1296088
Filename
1296088
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