Title :
Pre-silicon parameter generation methodology using BSIM3 for device/circuit concurrent design
Author :
Miyama, Mikako ; Kamohara, Shiro ; Hiraki, Mitsuru ; Onozawa, Kazunori ; Kunitomo, Hisaaki
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
Abstract :
We present a physical parameter extraction methodology for BSIM3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20 μm process device can be generated from a 0.25 μm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; microprocessor chips; semiconductor device models; 0.2 micron; 0.25 micron; BSIM3; MOSFET model; device/circuit concurrent design; microprocessor; physical parameter extraction methodology; pre-silicon parameter generation methodology; Delay estimation; Design optimization; Energy consumption; Integrated circuit interconnections; Microprocessors; Optimization methods; Parameter extraction; Predictive models; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5443-5
DOI :
10.1109/CICC.1999.777306
