Substrate-induced high-frequency noise in deep sub-micron MOSFETs for RF applications

Author

Kishore, S.V. ; Chang, Glenn ; Asmanis, Georgios ; Hull, Chris ; Stubbe, Frederic

Author_Institution

Silicon Wave, San Diego, CA, USA

fYear

1999

fDate

1999

Firstpage

365

Lastpage

368

Abstract

We present results from high-frequency noise measurements on NMOS devices fabricated in a 0.5-μm epi-based CMOS process. These noise measurements at RF frequencies reveal the existence of substrate-induced high-frequency noise in transistors operating in the saturation regime. The substrate-induced noise is independent of the transistor bias conditions, but is strongly dependent on the geometry of the device and the MOS gate-to-bulk capacitance. A new ac noise model for CMOS devices operating at RF frequencies presented here shows good conformity to measurements. Its implications are emphasized via the design of a low-noise amplifier (LNA) operating at 2 GHz. The minimum achievable noise-figure (NF) can be higher by as much as 0.6 dB due to this substrate-induced high-frequency noise

Keywords

MOSFET; UHF field effect transistors; semiconductor device models; semiconductor device noise; 0.5 micron; 2 GHz; AC noise model; CMOS device; NMOS device; RF transistor; capacitance; deep submicron MOSFET; low-noise amplifier; noise figure; substrate-induced high-frequency noise; CMOS process; Capacitance; Frequency measurement; Geometry; Low-noise amplifiers; MOS devices; MOSFETs; Noise measurement; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5443-5

Type

conf

DOI

10.1109/CICC.1999.777307

Filename

777307