RF simulations and physics of the channel noise parameters within MOS transistors

Author

Manku, Tajinder ; Obrecht, Michael ; Lin, Yi

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

fYear

1999

fDate

1999

Firstpage

369

Lastpage

372

Abstract

In this paper we report results for the RF channel noise parameters of MOS transistors. Our hope is that these results will provide RF CMOS circuit designers with a better understanding of the noise properties of a MOS device. The results were obtained from a physically based 2-D device noise simulator. The simulator inherently takes into account the microwave noise sources within the transistor. The drain channel noise as well as the induced gate noise are presented. The results show that drain channel noise is strongly influenced by short channel effects whereas induced gate noise is not. Furthermore, the excess noise in the channel due to hot electrons near the drain was determined to be less important than normally thought

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; digital simulation; electronic engineering computing; field effect MMIC; hot carriers; integrated circuit design; microwave field effect transistors; semiconductor device models; semiconductor device noise; CMOS LDD MOSFET; MOS transistors; RF CMOS circuit design; RF simulations; channel noise parameters; drain channel noise; hot electrons; induced gate noise; microwave noise sources; physically based 2D device noise simulator; short channel effects; Circuit noise; Circuit simulation; Computational modeling; Electrons; MOS devices; MOSFETs; Microwave devices; Physics; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5443-5

Type

conf

DOI

10.1109/CICC.1999.777308

Filename

777308